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may 2002 dsc-5296/03 1 ?2002 integrated device technology, inc. pin description summary description the idt71v3548 are 3.3v high-speed 4,718,592-bit (4.5 megabit) synchronous srams. they are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. thus, they have been given the name zbt tm , or zero bus turnaround. features u u u u u 256k x 18 memory configurations u u u u u supports high performance system speed - 133 mhz (4.2 ns clock-to-data access) u u u u u zbt tm feature - no dead cycles between write and read cycles u u u u u internally synchronized output buffer enable eliminates the need to control oe u u u u u single r/ w (read/write) control pin u u u u u positive clock-edge triggered address, data, and control signal registers for fully pipelined applications u u u u u 4-word burst capability (interleaved or linear) u u u u u individual byte write ( bw 1 - bw 4 ) control (may tie active) u u u u u three chip enables for simple depth expansion u u u u u 3.3v power supply (5%), 3.3v i/o supply (v ddq) u u u u u optional boundary scan jtag interface (ieee 1149.1 compliant) u u u u u packaged in a jedec standard 100-pin plastic thin quad flatpack (tqfp), 119 ball grid array (bga) and 165 fine pitch ball grid array (fbga) a 0 -a 17 address inputs input synchronous ce 1 , ce 2 , ce 2 chip enables input synchronous oe output enable input asynchronous r/ w read/write signal input synchronous cen clock enable input synchronous bw 1 , bw 2 , bw 3 , bw 4 individual byte write selects input synchronous clk clock input n/a adv/ ld advance burst addre ss / load new address input synchronous lbo linear / interleaved burst order input static tms test mode select input synchronous tdi te s t da ta in p ut input synchronous tck te s t cl o c k input n/a tdo test data output output synchronous trst jtag reset (optional) input asynchronous zz sleep mode input synchronous i/o 0 -i/o 15 , i/o p1 -i/o p2 data input / output i/o synchronous v dd , v ddq core power, i/o power supply static v ss ground supply static 5296 tbl 01 idt71v3548s idt71v3548sa 256k x 18 3.3v synchronous zbt sram 3.3v i/o, burst counter pipelined outputs address and control signals are applied to the sram during one clock cycle, and two cycles later the associated data cycle occurs, be it read or write. the idt71v3548 contain data i/o, address and control signal registers. output enable is the only asynchronous signal and can be used to disable the outputs at any given time. a clock enable ( cen ) pin allows operation of the idt71v3548 to be suspended as long as necessary. all synchronous inputs are ignored when ( cen ) is high and the internal device registers will hold their previous values. there are three chip enable pins ( ce 1 , ce 2 , ce 2 ) that allow the user to deselect the device when desired. if any one of these three are not asserted when adv/ ld is low, no new memory operation can be initiated. however, any pending data transfers (reads or writes) will be completed. the data bus will tri-state two cycles after chip is deselected or a write is initiated. the idt71v3548 has an on-chip burst counter. in the burst mode, the idt71v3548 can provide four cycles of data for a single address presented to the sram. the order of the burst sequence is defined by the lbo input pin. the lbo pin selects between linear and interleaved burst sequence. the adv/ ld signal is used to load a new external address (adv/ ld = low) or increment the internal burst counter (adv/ ld = high). the idt71v3548 srams utilize idt's latest high-performance cmos process and are packaged in a jedec standard 14mm x 20mm 100- pin plastic thin quad flatpack (tqfp) as well as a 119 ball grid array (bga) and 165 fine pitch ball grid array (fbga).
6.42 2 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s pin definition (1) note: 1. all synchronous inputs must meet specified setup and hold times with respect to clk. symbol pin function i/o active description a 0 -a 17 address inputs i n/a synchronous address inputs. the address register is triggered by a combination of the rising edge of clk, adv/ ld low, cen low, and true chip enables. adv/ ld advance / load i n/a adv/ ld is a synchronous input that is used to load the internal registers with new address and control when it is sampled low at the rising edge of clock with the chip selected. when adv/ ld is low with the chip deselected, any burst in progress is terminated. when adv/ ld is sampled high then the internal burst counter is advanced for any burst that was in progress. the external addresses are ignored when adv/ ld is sampled high. r/ w read / write i n/a r/ w signal is a synchronous input that identifies whether the current load cycle initiated is a re ad o r write access to the memo ry array. the data b us activ ity for the current cycle take s place two clock cycles later. cen clock enable i low synchronous clock enable input. when cen is sampled high, all other synchronous inputs, including clock are ignored and outputs remain unchanged. the effect of cen sampled high on the device outputs is as if the low to high clock transition did not occur. for normal operation, cen must be sampled low at rising edge of clock. bw 1 - bw 4 individual byte write enables i low synchronous byte write enables. each 9-bit byte has its own active low byte write enable. on load write cycles (when r/ w and adv/ ld are sampled low) the appropriate byte write signal ( bw 1 - bw 4 ) must be valid. the byte write signal must also be valid on each cycle of a burst write. byte write signals are ignored when r/ w is sampled high. the appropriate byte(s) of data are written into the device two cycles later. bw 1 - bw 4 can all be tied low if always doing write to the entire 36-bit word. ce 1 , ce 2 chip enables i low synchro nous active low chip enable. ce 1 and ce 2 are used with ce 2 to enable the idt71v3548. ( ce 1 or ce 2 sampled high or ce 2 sampled low) and adv/ ld low at the rising edge of clock, initiates a deselect cycle. the zbt tm has a two cycle deselect, i.e., the data bus will tri-state two clock cycles after deselect is initiated. ce 2 chip enable i high synchronous active high chip enable. ce 2 is used with ce 1 and ce 2 to enable the chip. ce 2 has inverted polarity but otherwise identical to ce 1 and ce 2 . clk clock i n/a this is the clock input to the idt71v3548. except for oe , all timing references for the device are made with respect to the rising edge of clk. i/o 0 -i/o 31 i/o p1 -i/o p4 data inp ut/output i/o n/a synchro nous data inp ut/o utp ut (i/o) p ins. bo th the data inp ut p ath and data o utp ut path are registered and triggered by the rising edge of clk. lbo linear burst order i low burs t order selection input. when lbo is high the interleaved burst sequence is selected. when lbo is low the linear burst sequence is selected. lbo is a static inp ut and it must not change during device operation. oe output enable i low asynchronous output enable. oe must be low to read d ata from the 71v3548. when oe is high the i/o pins are in a high-impedance state. oe does not need to be actively controlled for read and write cycles. in normal operation, oe can be tied low. tms test mode select i n/a gives input command for tap controller. sampled on rising edge of tdk. this pin has an internal pullup. tdi test data input i n/a serial input of registers placed between tdi and tdo. sampled on rising edge of tck. this pin has an internal pullup. tck test clo ck i n/a clock input of tap controller. each tap event is clocked. test inputs are captured on rising edge of tck, while test outputs are driven from the falling edge of tck. this pin has an internal pullup. tdo test data outp ut o n/a serial output of registers placed between tdi and tdo. this output is active depending on the state of the tap controller. trst jtag reset (optional) ilow op tional asynchro no us jtag rese t. can b e used to re set the tap controlle r, but no t re quired . jtag reset occurs automatically at power up and also resets using tms and tck per ieee 1149.1. if not used trst can be left floating. this pin has an internal pullup. zz sleep mode i high synchronous sleep mode input. zz high will gate the clk internally and power down the idt71v3548 to its lowest power consumption le vel. data retention is guaranteed in sleep mode. this pin has an internal pulldown v dd power supply n/a n/a 3.3v core power supply. v ddq power supply n/a n/a 3.3v i/o supply. v ss ground n/a n/a ground. 5296 tbl 02
6.42 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s 3 recommended dc operating conditions notes: 1. v il (min.) = C1.0v for pulse width less than t cyc /2, once per cycle. 2. v ih (max.) = +6.0v for pulse width less than t cyc /2, once per cycle. functional block diagram clk dq dq dq address a [0:17] control logic address control di do input r egister 5296 drw 01 clock data i/o [0:15], i/o p[1:2] d q clk output register mux sel gate o e c e 1, ce2, c e 2 r/ w c e n adv/ l d b w x l b o 256x18 bit memory array , jtag (sa version) tms tdi tck tdo t r s t (optional) symbol parameter min. typ. max. unit v dd core supply voltage 3.135 3.3 3.465 v v ddq i/o supply voltage 3.135 3.3 3.465 v v ss supply voltage 0 0 0 v v ih input high voltage - inputs 2.0 ____ v dd +0.3 v v ih input high voltage - i/o 2.0 ____ v ddq +0.3 (2 ) v v il input low voltage -0.3 (1 ) ____ 0.8 v 5296 tbl 04 recommended operating temperature and supply voltage grade temperature (1) v ss v dd v ddq commercial 0c to +70c 0v 3.3v 5% 3.3v 5% industrial -40c to +85c 0v 3.3v5% 3.3v5% 52 96 tbl 05 notes: 1. t a is the "instant on" case temperature.
6.42 4 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s absolute maximum ratings (1) pin configuration - 256k x 18 100 pin tqfp capacitance (1) (t a = +25 c, f = 1.0mhz) notes: 1. pins 14, 16 and 66 do not have to be connected directly to v dd as long as the input voltage is 3 v ih . 2. pins 83 and 84 are reserved for future 8m and 16m respectively. 3. pin 64 does not have to be connected directly to v ss as long as the input voltage is v il ; on the latest die revision this pin supports zz (sleep mode). top view 100 tqfp notes: 1. stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. v dd terminals only. 3. v ddq terminals only. 4. input terminals only. 5. i/o terminals only. 6. this is a steady-state dc parameter that applies after the power supply has reached its nominal operating value. power sequencing is not necessary; however, the voltage on any input or i/o pin cannot exceed v ddq during power supply ramp up. 7. t a is the "instant on" case temperature. note: 1. this parameter is guaranteed by device characterization, but not production tested. symbol rating commercial & industrial values unit v te rm (2) terminal voltage with respect to gnd -0.5 to +4.6 v v te rm (3,6) terminal voltage with respect to gnd -0.5 to v dd v v te rm (4,6) terminal voltage with respect to gnd -0.5 to v dd +0.5 v v te rm (5,6) terminal voltage with respect to gnd -0.5 to v ddq +0.5 v t a (7) commercial operating temperature -0 to +70 o c industrial operating temperature -40 to +85 o c t bias temperature under bias -55 to +125 o c t stg storage temperature -55 to +125 o c p t power dissipation 2.0 w i out dc output current 50 ma 52 96 tb l 06 10099989796959493929190 87868584838281 89 88 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 a 6 a 7 c e 1 c e 2 n c n c b w 2 b w 1 c e 2 v d d v s s c lk r / w c e n o e a d v / ld n c (2) n c (2) a 8 a 9 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 lb o a 15 a 14 a 13 a 12 a 11 v d d v s s a 0 a 1 a 2 a 3 a 4 a 5 nc nc v ddq v ss nc i/o p2 i/o 15 i/o 14 v ss v ddq i/o 13 i/o 12 v ss v dd i/o 11 i/o 10 v ddq v ss i/o 9 i/o 8 nc nc v ss v ddq nc nc 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 nc v ddq v ss nc i/o p1 i/o 7 i/o 6 v ss v ddq i/o 5 i/o 4 v ss v dd i/o 3 i/o 2 v ddq v ss i/o 1 i/o 0 nc nc v ss v ddq nc nc 5296 drw 02 v dd (1) nc nc v dd (1) nc a 16 a 17 nc v dd (1) a 10 v ss/zz (3) , n c n c n c n c symbol parameter (1) conditions max. unit c in input capacitance v in = 3dv 5 pf c i/o i/o capacitance v out = 3dv 7 pf 5296 tbl 07 symbol parameter (1) conditions max. unit c in input capacitance v in = 3dv 7 pf c i/o i/o capacitance v out = 3dv 7 pf 5296 tbl 07a 119 bga capacitance (1) (t a = +25 c, f = 1.0mhz) 165 fbga capacitance (1) (t a = +25 c, f = 1.0mhz) symbol parameter (1 ) conditions max. unit c in input capacitance v in = 3dv tbd pf c i/o i/o capacitance v out = 3dv tbd pf 5296 tbl 07b
6.42 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s 5 1234567 a v ddq a 6 a 4 nc(2) a 8 a 16 v ddq b nc ce2 a 3 adv/ ld a 9 ce 2 nc c a 7 a 2 v dd a 13 a 17 nc d i/o 8 nc v ss nc v ss i/o 7 nc e nc i/o 9 v ss v ss nc i/o 6 f v ddq nc v ss oe v ss i/o 5 v ddq g nc i/o 10 bw 2 nc i/o 4 h i/o 11 nc v ss r/ w v ss i/o 3 nc j v ddq v dd v dd v dd v ddq k nc i/o 12 v ss clk v ss nc i/o 2 l i/o 13 nc nc bw 1 i/o 1 nc m v ddq i/o 14 v ss cen v ss nc v ddq n i/o 15 nc v ss a 1 v ss i/o 0 nc p nc i/o p2 v ss a 0 v ss nc i/o p1 r nc a 5 lbo v dd a 12 t nc a 10 a 15 nc a 14 a 11 nc/zz (5) u v ddq v ddq 5296 drw 13 nc dd(1) vnc v ss v ss ce 1 nc(2) v dd(1) v dd(1) , nc/tms (3) nc/ trst (3,4) nc/tdo (3) nc/tck (3) nc/tdi (3) pin configuration - 256k x 18, 119 bga top view notes: 1. j3, j5, and r5 do not have to be directly connected to v dd as long as the input voltage is 3 v ih . 2. g4 and a4 are reserved for future 8m and 16m respectively. 3. these pins are nc for the "s" version and the jtag signal listed for the "sa" version. 4. trst is offered as an optional jtag reset if required in the application. if not needed, can be left floating and will internally be pulled to v dd. 5. pin t7 supports zz (sleep mode) on the latest die revision.
6.42 6 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s pin configuration - 256k x 18, 165 fbga 1234567891011 anc (2) a 7 ce 1 bw 2 nc ce 2 cen adv /ld nc (2) a 8 a 10 bnc a 6 ce 2 nc bw 1 clk r/ w oe nc (2) a 9 nc (2) cnc ncv ddq v ss v ss v ss v ss v ss v ddq nc i/o p1 dnc i/o 8 v ddq v dd v ss v ss v ss v dd v ddq nc i/o 7 enc i/o 9 v ddq v dd v ss v ss v ss v dd v ddq nc i/o 6 fnc i/o 10 v ddq v dd v ss v ss v ss v dd v ddq nc i/o 5 gnc i/o 11 v ddq v dd v ss v ss v ss v dd v ddq nc i/o 4 hv dd (1) v dd (1) nc v dd v ss v ss v ss v dd nc nc nc/zz (5) ji/o 12 nc v ddq v dd v ss v ss v ss v dd v ddq i/o 3 nc ki/o 13 nc v ddq v dd v ss v ss v ss v dd v ddq i/o 2 nc li/o 14 nc v ddq v dd v ss v ss v ss v dd v ddq i/o 1 nc mi/o 15 nc v ddq v dd v ss v ss v ss v dd v ddq i/o 0 nc ni/o p2 nc v ddq v ss nc/ trst (3, 4) nc v dd (1) v ss v ddq nc nc pnc nc (2) a 5 a 2 nc/tdi (3) a 1 nc/tdo (3) a 11 a 14 a 15 nc r lbo nc (2) a 4 a 3 nc/tms (3) a 0 nc/tck (3) a 12 a 13 a 16 a 17 5296 tbl 25 notes: 1. h1, h2, and n7 do not have to be directly connected to v dd as long as the input voltage is 3 v ih . 2. a9, b9, b11, a1, r2 and p2 are reserved for future 9m, 18m, 36m, 72m, 144m, and 288m respectively respectively. 3. these pins are nc for the "s" version and the jtag signal listed for the "sa" version. 4. trst is offered as an optional jtag reset if required in the application. if not needed, can be left floating and will internally be pulled to v dd. 5. pin h11 supports zz (sleep mode) on the latest die revision.
6.42 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s 7 synchronous truth table (1) partial truth table for writes (1) notes: 1. l = v il , h = v ih , x = dont care. 2. when adv/ ld signal is sampled high, the internal burst counter is incremented. the r/ w signal is ignored when the counter is advanced. therefore the nature of the burst cycle (read or write) is determined by the status of the r/ w signal when the first address is loaded at the beginning of the burst cycle. 3. deselect cycle is initiated when either ( ce 1 , or ce 2 is sampled high or ce 2 is sampled low) and adv/ ld is sampled low at rising edge of clock. the data bus will tri-state two cycles after deselect is initiated. 4. when cen is sampled high at the rising edge of clock, that clock edge is blocked from propogating through the part. the state of all th e internal registers and the i/ os remains unchanged. 5. to select the chip requires ce 1 = l, ce 2 = l, ce 2 = h on these chip enables. chip is deselected if any one of the chip enables is false. 6. device outputs are ensured to be in high-z after the first rising edge of clock upon power-up. 7. q - data read from the device, d - data written to the device. notes: 1. l = v il , h = v ih , x = dont care. 2. multiple bytes may be selected during the same cycle. 3. n/a for x18 configuration. cen r/ w chip (5) enable adv/ ld bw x address used previous cycle current cycle i/o (2 cycles later) l l select l valid external x load write d (7) l h select l x external x load read q (7) l x x h valid internal load write / burst write burst write (advance burst counter) (2) d (7) l x x h x internal load read / burst read burst read (advance burst counter) (2) q (7) l x deselect l x x x deselect or stop (3) hiz l x x h x x deselect / noop noop hiz h x x x x x x suspend (4) previous value 52 96 tb l 08 operation r/ w bw 1 bw 2 bw 3 (3) bw 4 (3) read hxxxx write all bytes l l l l l write byte 1 (i/o[0:7], i/o p1 ) (2) llhhh write byte 2 (i/o[8:15], i/o p2 ) (2) lhlhh no write l hhhh 52 96 tbl 09
6.42 8 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s linear burst sequence table ( lbo =v ss ) interleaved burst sequence table ( lbo =v dd ) functional timing diagram (1) notes: 1. this assumes cen , ce 1 , ce 2 , ce 2 are all true. 2. all address, control and data_in are only required to meet set-up and hold time with respect to the rising edge of clock. dat a_out is valid after a clock-to-data delay from the rising edge of clock. note: 1. upon completion of the burst sequence the counter wraps around to its initial state and continues counting. note: 1. upon completion of the burst sequence the counter wraps around to its initial state and continues counting. sequence 1 sequence 2 sequence 3 sequence 4 a1 a0 a1 a0 a1 a0 a1 a0 first address 00011011 second address 0 1 1 0 1 1 0 0 third address 1 0 1 1 0 0 0 1 fourth address (1) 11000110 529 6 tb l 11 sequence 1 sequence 2 sequence 3 sequence 4 a1 a0 a1 a0 a1 a0 a1 a0 first address 00011011 second address 0 1 0 0 1 1 1 0 third address 1 0 1 1 0 0 0 1 fourth address (1) 11100100 52 96 tb l 10 n+29 a29 c29 d/q27 address (2) (a0 - a17) control (2) (r/ w ,adv/ ld , bw x) data (2) i/o [0:15], i/o p[1:2] cycle clock n+30 a30 c30 d/q28 n+31 a31 c31 d/q29 n+32 a32 c32 d/q30 n+33 a33 c33 d/q31 n+34 a34 c34 d/q32 n+35 a35 c35 d/q33 n+36 a36 c36 d/q34 n+37 a37 c37 d/q35 5296 drw 03 ,
6.42 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s 9 notes: 1. h = high; l = low; x = dont care; z = high impedance. 2. ce = l is defined as ce 1 = l, ce 2 = l and ce 2 = h. ce = h is defined as ce 1 = h, ce 2 = h or ce 2 = l. read operation (1) device operation - showing mixed load, burst, deselect and noop cycles (2) notes: 1. ce = l is defined as ce 1 = l, ce 2 = l and ce 2 = h. ce = h is defined as ce 1 = h, ce 2 = h or ce 2 = l. 2. h = high; l = low; x = dont care; z = high impedance. cycle address r/ w adv/ ld ce (1) cen bw x oe i/o comments na 0 hl llxxxload read n+1 x x h x l x x x burst read n+2 a 1 hl llxlq 0 load read n+3 x x l h l x l q 0+1 deselect or stop n+4 x x h xlxlq 1 noop n+5 a 2 hl llxxzload read n+6 x x h x l x x z burst read n+7 x x l h l x l q 2 deselect or stop n+8 a 3 l l llllq 2+1 load write n+9 x x h x l l x z burst write n+10 a 4 l l lllxd 3 load write n+11 x x l h l x x d 3+1 deselect or stop n+12 x x h x l x x d 4 noop n+13 a 5 l l lllxzload write n+14 a 6 hl llxxzload read n+15 a 7 l l lllxd 5 load write n+16 x x h x l l l q 6 burst write n+17 a 8 hl llxxd 7 load read n+18 x x h x l x x d 7+1 burst read n+19 a 9 l l llllq 8 load write 52 96 tb l 12 cycle address r/ w adv/ ld ce (2) cen bw x oe i/o comments na 0 h l l l x x x address and control meet setup n+1 x x x x l x x x clock setup valid n+2 x x x xxxlq 0 contents of address a 0 read out 52 96 tb l 13
6.42 10 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s burst write operation (1) burst read operation (1) write operation (1) notes: 1. h = high; l = low; x = dont care; z = high impedance.. 2. ce = l is defined as ce 1 = l, ce 2 = l and ce 2 = h. ce = h is defined as ce 1 = h, ce 2 = h or ce 2 = l. notes: 1. h = high; l = low; x = dont care; z = high impedance. 2. ce = l is defined as ce 1 = l, ce 2 = l and ce 2 = h. ce = h is defined as ce 1 = h, ce 2 = h or ce 2 = l. notes: 1. h = high; l = low; x = dont care; ? = dont know; z = high impedance. 2. ce = l is defined as ce 1 = l, ce 2 = l and ce 2 = h. ce = h is defined as ce 1 = h, ce 2 = h or ce 2 = l. cycle address r/ w adv/ ld ce (2) cen bw x oe i/o comments na 0 h l l l x x x address and control meet setup n+1 x x h x l x x x clock setup valid, advance counter n+2 x x h xlxlq 0 address a 0 read out, inc. count n+3 x x h xlxlq 0+1 address a 0+1 read out, inc. count n+4 x x h xlxlq 0+2 address a 0+2 read out, inc. count n+5 a 1 hl llxlq 0+3 address a 0+3 read out, load a 1 n+6 x x h xlxlq 0 address a 0 read out, inc. count n+7 x x h xlxlq 1 address a 1 read out, inc. count n+8 a 2 hl llxlq 1+1 address a 1+1 read out, load a 2 52 96 tb l 14 cycle address r/ w adv/ ld ce (2) cen bw x oe i/o comments na 0 l l l l l x x address and control meet setup n+1 x x x x l x x x clock setup valid n+2 x x x x l x x d 0 write to address a 0 52 96 tb l 15 cycle address r/ w adv/ ld ce (2) cen bw x oe i/o comments na 0 l l l l l x x address and control meet setup n+1 x x h x l l x x clock setup valid, inc. count n+2 x x h x l l x d 0 address a 0 write, inc. count n+3 x x h x l l x d 0+1 address a 0+1 write, inc. count n+4 x x h x l l x d 0+2 address a 0+2 write, inc. count n+5 a1 l l lllxd 0+3 address a 0+3 write, load a 1 n+6 x x h x l l x d 0 address a 0 write, inc. count n+7 x x h x l l x d 1 address a 1 write, inc. count n+8 a 2 l l lllxd 1+1 address a 1+1 write, load a 2 52 96 tb l 16
6.42 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s 11 read operation with clock enable used (1) write operation with clock enable used (1) notes: 1. h = high; l = low; x = dont care; z = high impedance. 2. ce = l is defined as ce 1 = l, ce 2 = l and ce 2 = h. ce = h is defined as ce 1 = h, ce 2 = h or ce 2 = l. notes: 1. h = high; l = low; x = dont care; z = high impedance. 2. ce = l is defined as ce 1 = l, ce 2 = l and ce 2 = h. ce = h is defined as ce 1 = h, ce 2 = h or ce 2 = l. cycle address r/ w adv/ ld ce (2) cen bw x oe i/o comments na 0 h l l l x x x address and control meet setup n+1 x x x x h x x x clock n+1 ignored n+2 a 1 h l l l x x x clock valid n+3 x x x x h x l q 0 clock ignored. data q 0 is on the bus. n+4 x x x x h x l q 0 clock ignored. data q 0 is on the bus. n+5 a 2 hl llxlq 0 address a 0 read out (bus trans.) n+6 a 3 hl llxlq 1 address a 1 read out (bus trans.) n+7 a 4 hl llxlq 2 address a 2 read out (bus trans.) 52 96 tb l 17 cycle address r/ w adv/ ld ce (2) cen bw x oe i/o comments na 0 l l l l l x x address and control meet setup. n+1 x x x x h x x x clock n+1 ignored. n+2 a 1 l l lllxxclock valid. n+3 x x x x h x x x clock ignored. n+4 x x x x h x x x clock ignored. n+5 a 2 l l lllxd 0 write data d 0 n+6 a 3 l l lllxd 1 write data d 1 n+7 a 4 l l lllxd 2 write data d 2 52 96 tb l 18
6.42 12 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s notes: 1. h = high; l = low; x = dont care; ? = dont know; z = high impedance. 2. ce = l is defined as ce 1 = l, ce 2 = l and ce 2 = h. ce = h is defined as ce 1 = h, ce 2 = h or ce 2 = l. 3. device outputs are ensured to be in high-z after the first rising edge of clock upon power-up. read operation with chip enable used (1) write operation with chip enable used (1) notes: 1. h = high; l = low; x = dont care; ? = dont know; z = high impedance. 2. ce = l is defined as ce 1 = l, ce 2 = l and ce 2 = h. ce = h is defined as ce 1 = h, ce 2 = h or ce 2 = l. cycle address r/ w adv/ ld ce (2) cen bw x oe i/o (3) comments n x x l h l x x ? deselected. n+1 x x l h l x x ? deselected. n+2 a 0 h l l l x x z address and control meet setup n+3 x x l h l x x z deselected or stop. n+4 a 1 hl llxlq 0 address a 0 read out. load a 1 . n+5 x x l h l x x z deselected or stop. n+6 x x l h l x l q 1 address a 1 read out. deselected. n+7 a 2 h l l l x x z address and control meet setup. n+8 x x l h l x x z deselected or stop. n+9 x x l h l x l q 2 address a 2 read out. deselected. 52 96 tb l 19 cycle address r/ w adv/ ld ce (2) cen bw x oe i/o (3) comments n x x l h l x x ? deselected. n+1 x x l h l x x ? deselected. n+2 a 0 l l l l l x z address and control meet setup n+3 x x l h l x x z deselected or stop. n+4 a 1 l l lllxd 0 address d 0 write in. load a 1 . n+5 x x l h l x x z deselected or stop. n+6 x x l h l x x d 1 address d 1 write in. deselected. n+7 a 2 l l l l l x z address and control meet setup. n+8 x x l h l x x z deselected or stop. n+9 x x l h l x x d 2 address d 2 write in. deselected. 52 96 tb l 20
6.42 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s 13 dc electrical characteristics over the operating temperature and supply voltage range (v dd = 3.3v +/-5%) figure 2. lumped capacitive load, typical derating ac test conditions (v ddq = 3.3v) dc electrical characteristics over the operating temperature and supply voltage range (1) (v dd = 3.3v +/-5%) figure 1. ac test load ac test loads note: 1. the lbo, tms, tdi, tck and trst pins will be internally pulled to v dd and zz will be internally pulled to v ss if it is not actively driven in the application. notes: 1. all values are maximum guaranteed values. 2. at f = f max, inputs are cycling at the maximum frequency of read cycles of 1/t cyc ; f=0 means no input lines are changing. 3. for i/os v hd = v ddq C 0.2v, v ld = 0.2v. for other inputs v hd = v dd C 0.2v, v ld = 0.2v. v ddq /2 50 w i/o z 0 =50 w 5296 drw 04 , 1 2 3 4 20 30 50 100 200 d t cd (typical, ns) capacitance (pf) 80 5 6 5296 drw 05 , symbol parameter test conditions min. max. unit |i l i | input leakage current v dd = max., v in = 0v to v dd ___ 5 a |i li | lbo , jtag and zz input leakage current (1 ) v dd = max., v in = 0v to v dd ___ 30 a |i lo | output leakage current v out = 0v to v ddq , device deselected ___ 5 a v ol output low voltage i ol = +8ma, v dd = min. ___ 0.4 v v oh output high voltage i oh = -8ma, v dd = min. 2.4 ___ v 5296 tb l 2 1 symbol parameter test conditions 133mhz 100mhz unit com'l ind com'l ind i dd operating power supply current device selected, outputs open, adv/ld = x, v dd = max., v in > v ih or < v il , f = f max (2) 300 310 250 255 ma i sb1 cmos standby power supply current device deselected, outputs open, v dd = max., v in > v hd or < v ld , f = 0 (2,3) 40 45 40 45 ma i sb2 clock running power supply current device deselected, outputs open, v dd = max., v in > v hd or < v ld , f = f max (2.3) 110 120 100 110 ma i sb3 idle power supply current device selected, outputs open, cen > v ih , v dd = max., v in > v hd or < v ld , f = f max (2,3) 40 45 40 45 ma 5296 tbl 22 input pulse levels input rise/fall times input timing reference levels output timing reference levels ac test load 0 to 3v 2ns 1.5v 1.5v see figure 1 52 96 tb l 23
6.42 14 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s ac electrical characteristics (v dd = 3.3v +/-5%, commercial and industrial temperature ranges) notes: 1. t f = 1/t cyc . 2. measured as high above 0.6v ddq and low below 0.4v ddq . 3. transition is measured 200mv from steady-state. 4. these parameters are guaranteed with the ac load (figure 1) by device characterization. they are not production tested. 5. to avoid bus contention, the output buffers are designed such that t chz (device turn-off) is about 1ns faster than t clz (device turn-on) at a given temperature and voltage. the specs as shown do not imply bus contention because t clz is a min. parameter that is worse case at totally different test conditions (0 deg. c, 3.465v) than t chz , which is a max. parameter (worse case at 70 deg. c, 3.135v). 133mhz 100mhz symbol parameter min. max. min. max. unit t cy c clock cycle time 7.5 ____ 10 ____ ns t f (1) clock frequence ____ 133 ____ 100 mhz t ch (2) clock high pulse width 2.2 ____ 3.2 ____ ns t cl (2) clock low pulse width 2.2 ____ 3.2 ____ ns output parameters t cd clock high to valid data ____ 4.2 ____ 5ns t cdc clock high to data change 1.5 ____ 1.5 ____ ns t cl z (3, 4,5) clock high to output active 1.5 ____ 1.5 ____ ns t chz (3, 4,5) clock high to data high-z 1.5 3 1.5 3.3 ns t oe output enable access time ____ 4.2 ____ 5ns t ol z (3,4) outp ut enable low to data active 0 ____ 0 ____ ns t ohz (3,4) outp ut enable high to data high-z ____ 4.2 ____ 5ns set up times t se clock enable setup time 1.7 ____ 2.0 ____ ns t sa address setup time 1.7 ____ 2.0 ____ ns t sd data in setup time 1.7 ____ 2.0 ____ ns t sw read/write (r/ w ) setup time 1.7 ____ 2.0 ____ ns t sadv advance/load (adv/ ld ) setup time 1.7 ____ 2.0 ____ ns t sc chip enable/select setup time 1.7 ____ 2.0 ____ ns t sb byte write enable ( bw x) setup time 1.7 ____ 2.0 ____ ns hold times t he clock enable hold time 0.5 ____ 0.5 ____ ns t ha address hold time 0.5 ____ 0.5 ____ ns t hd data in hold time 0.5 ____ 0.5 ____ ns t hw read/write (r/ w ) hold time 0.5 ____ 0.5 ____ ns t hadv advance/load (adv/ ld ) hold time 0.5 ____ 0.5 ____ ns t hc chip enable/select hold time 0.5 ____ 0.5 ____ ns t hb byte write enable ( bw x) hold time 0.5 ____ 0.5 ____ ns 5296 tbl 24
6.42 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s 15 timing waveform of read cycle (1,2,3,4) notes: 1. q (a 1 ) represents the first output from the external address a 1 . q (a 2 ) represents the first output from the external address a 2 ; q (a 2+1 ) represents the next output data in the burst sequence of the base address a 2 , etc. where address bits a0 and a1 are advancing for the four word burst in the sequence defined by the state of the lbo input. 2. ce 2 timing transitions are identical but inverted to the ce 1 and ce 2 signals. for example, when ce 1 and ce 2 are low on this waveform, ce 2 is high. 3. burst ends when new address and control are loaded into the sram by sampling adv/ ld low. 4. r/ w is don't care when the sram is bursting (adv/ ld sampled high). the nature of the burst access (read or write) is fixed by the state of the r/ w signal when new address and control are loaded into the sram. a d v / ld ( c e n high, elim inates current l-h clock edge) t c d t h a d v p ipeline r ead (b urst w raps around to initial state) t c d c t c lz t c h z t c d t c d c r / w c lk c e n a d d r e s s o e d a t a o u t t h e t s e a 1 a 2 t c h t c l t c y c t s a d v t h w t s w t h a t s a t h c t s c b urst p ipeline r ead p ipeline r ead b w 1 - b w 4 5296 drw 06 c e 1 , c e 2 (2) q (a 2+ 3 ) q (a 2 ) q (a 2+ 2 ) q (a 2+ 2 ) q (a 2+ 1 ) q (a 2 ) q (a 1 ) , ,
6.42 16 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s notes: 1. d (a 1 ) represents the first input to the external address a 1 . d (a 2 ) represents the first input to the external address a 2 ; d (a 2+1 ) represents the next input data in the burst sequence of the base address a 2 , etc. where address bits a 0 and a 1 are advancing for the four word burst in the sequence defined by the state of the lbo input. 2. ce 2 timing transitions are identical but inverted to the ce 1 and ce 2 signals. for example, when ce 1 and ce 2 are low on this waveform, ce2 is high. 3. burst ends when new address and control are loaded into the sram by sampling adv/ ld low. 4. r/ w is don't care when the sram is bursting (adv/ ld sampled high). the nature of the burst access (read or write) is fixed by the state of the r/ w signal when new address and control are loaded into the sram. 5. individual byte write signals ( bw x) must be valid on all write and burst-write cycles. a write cycle is initiated when r/ w signal is sampled low. the byte write information comes in two cycles before the actual data is presented to the sram. timing waveform of write cycles (1,2,3,4,5) t h e t s e r / w a 1 a 2 c l k c e n a d v / l d a d d r e s s o e d a t a in t h d t s d t c h t c l t c y c t h a d v t s a d v t h w t s w t h a t s a t h c t s c b urst p ipeline w rite p ipeline w rite p ipeline w rite t h b t s b (b urst w raps around to initial state) t h d t s d ( c e n high, elim inates current l-h clock edge) (2) d ( a 2+ 2 ) d ( a 2+ 3 ) d (a 1 ) d (a 2 ) d (a 2 ) 5296 drw 07 b w 1 - b w 4 c e 1, c e 2 d (a 2+ 1 ) , ,
6.42 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s 17 notes: 1. q (a 1 ) represents the first output from the external address a 1 . d (a 2 ) represents the input data to the sram corresponding to address a 2 . 2. ce 2 timing transitions are identical but inverted to the ce 1 and ce 2 signals. for example, when ce 1 and ce 2 are low on this waveform, ce 2 is high. 3. individual byte write signals ( bw x) must be valid on all write and burst-write cycles. a write cycle is initiated when r/ w signal is sampled low. the byte write information comes in two cycles before the actual data is presented to the sram. timing waveform of combined read and write cycles (1,2,3) t h e t s e r / w a 1 a 2 c lk c e n a d v / ld a d d r e s s c e 1 , c e 2 (2) b w 1 - b w 4 d a t a o u t q (a 3 ) q (a 1 ) q (a 6 ) q (a 7 ) t c d r ead t c h z 5296 drw 08 w rite t c lz d (a 2 ) d (a 4 ) t c d c d (a 5 ) w rite t c h t c l t c y c t h w t s w t h a t s a a 4 a 3 t h c t s c t s d t h d t h a d v t s a d v a 6 a 7 a 8 a 5 a 9 d a t a in t h b t s b o e r ead r ead , , ,
6.42 18 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s notes: 1. q (a 1 ) represents the first output from the external address a 1 . d (a 2 ) represents the input data to the sram corresponding to address a 2 . 2. ce 2 timing transitions are identical but inverted to the ce 1 and ce 2 signals. for example, when ce 1 and ce 2 are low on this waveform, ce 2 is high. 3. cen when sampled high on the rising edge of clock will block that l-h transition of the clock from propogating into the sram. the part will behave as if the l-h clock transition did not occur. all internal registers in the sram will retain their previous state. 4. individual byte write signals ( bw x) must be valid on all write and burst-write cycles. a write cycle is initiated when r/ w signal is sampled low. the byte write information comes in two cycles before the actual data is presented to the sram. timing waveform of cen operation (1,2,3,4) t h e t s e r / w a 1 a 2 c l k c e n a d v / l d a d d r e s s b w 1 - b w 4 o e d a t a o u t q (a 3 ) t c d t c lz t c h z t c h t c l t c y c t h c t s c d (a 2 ) t s d t h d t c d c a 4 a 5 t h a d v ts a d v t h w t s w t h a t s a a 3 t h b t s b d a t a in q (a 1 ) 5296 drw 09 q (a 1 ) b (a 2 ) c e 1 , c e 2 (2) ,
6.42 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s 19 timing waveform of cs operation (1,2,3,4) notes: 1. q (a 1 ) represents the first output from the external address a 1 . d (a 3 ) represents the input data to the sram corresponding to address a 3 . 2. ce 2 timing transitions are identical but inverted to the ce 1 and ce 2 signals. for example, when ce 1 and ce 2 are low on this waveform, ce 2 is high. 3. cen when sampled high on the rising edge of clock will block that l-h transition of the clock from propogating into the sram. the part will behave as if the l-h clock transition did not occur. all internal registers in the sram will retain their previous state. 4. individual byte write signals ( bw x) must be valid on all write and burst-write cycles. a write cycle is initiated when r/ w signal is sampled low. the byte write information comes in two cycles before the actual data is presented to the sram. r / w a 1 c l k a d v / l d a d d r e s s o e d a t a o u t q (a 1 ) t c d t c lz t c h z t c d c t c h t c l t c y c t h c t s c t s d t h d a 5 a 3 t s b d a t a in t h e t s e a 2 t h a t s a a 4 t h w t s w t h b c e n t h a d v t s a d v 5296 drw 10 q (a 2 ) q (a 4 ) d (a 3 ) b w 1 - b w 4 c e 1, c e 2 (2) ,
6.42 20 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s jtag interface specification (sa version only) tck device inputs (1) / tdi/tms device outputs (2) / tdo trst ( 3) t jcd t jdc t jrst t js t jh t jcyc t jrsr t jf t jcl t jr t jch m5296 drw 01 x symbol parameter min. max. units t jcyc jtag clock input period 100 ____ ns t jch jtag clock high 40 ____ ns t jcl jtag clock low 40 ____ ns t jr jtag clock rise time ____ 5 (1) ns t jf jtag clock fall time ____ 5 (1) ns t jrst jtag reset 50 ____ ns t jrsr jtag reset recovery 50 ____ ns t jcd jtag data output ____ 20 ns t jdc jtag data output hold 0 ____ ns t js jtag setup 25 ____ ns t jh jtag hold 25 ____ ns i5296 tbl 01 register name bit size instruction (ir) 4 bypass (byr) 1 jtag identification (jidr) 32 boundary scan (bsr) note (1) i5296 tbl 03 notes: 1. device inputs = all device inputs except tdi, tms and trst . 2. device outputs = all device outputs except tdo. 3. during power up, trst could be driven low or not be used since the jtag circuit resets automatically. trst is an optional jtag reset. note: 1. the boundary scan descriptive language (bsdl) file for this device is available by contacting your local idt sales representative. jtag ac electrical characteristics (1,2,3,4) scan register sizes notes: 1. guaranteed by design. 2. ac test load (fig. 1) on external output signals. 3. refer to ac test conditions stated earlier in this document. 4. jtag operations occur at one speed (10mhz). the base device may run at any speed specified in this datasheet.
6.42 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s 21 notes: 1. device outputs = all device outputs except tdo. 2. device inputs = all device inputs except tdi, tms, and trst . instruction field value description revision number (31:28) 0x2 reserved for version number. idt device id (27:12) 0x20a defines idt part number 71v3548sa. idt jedec id (11:1) 0x33 allows unique identification of device vendor as idt. id register indicator bit (bit 0) 1 indicates the presence of an id register. i5296 tbl 02 jtag identification register definitions (sa version only) instruction description opcode extest forces contents of the boundary scan cells onto the device outputs (1) . places the boundary scan register (bsr) between tdi and tdo. 0000 sample/preload places the boundary scan register (bsr) between tdi and tdo. sample allows data from device inputs (2) and outputs (1) to be captured in the boundary scan cells and shifted serially through tdo. preload allows data to be input serially into the boundary scan cells via the tdi. 0001 device_id loads the jtag id register (jidr) with the vendor id code and places the register between tdi and tdo. 0010 highz places the bypass register (byr) between tdi and tdo. forces all device output drivers to a high-z state. 0011 reserved several combinations are reserved. do not use codes other than those identified for extest, sample/preload, device_id, highz, clamp, validate and bypass instructions. 0100 reserved 0101 reserved 0110 reserved 0111 clamp uses byr. forces contents of the boundary scan cells onto the device outputs. places the bypass register (byr) between tdi and tdo. 1000 reserved same as above. 1001 reserved 1010 reserved 1011 reserved 1100 validate automatically loaded into the instruction register whenever the tap controller passes through the capture-ir state. the lower two bits '01' are mandated by the ieee std. 1 149.1 specification. 1101 reserved same as above. 1110 bypass the bypass instruction is used to truncate the boundary scan register as a single bit in length. 1111 i5296 tbl 04 available jtag instructions
6.42 22 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s 100-pin plastic thin quad flatpack package diagram outline
6.42 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s 23 119 ball grid array (bga) package diagram outline
6.42 24 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s 165 fine pitch ball grid array (fbga) package diagram outline
6.42 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s 25 timing waveform of oe operation (1) note: 1. a read operation is assumed to be in progress. ordering information oe data out t ohz t olz t oe valid 5296 drw 11 , 100-pin plastic thin quad flatpack (tqfp) 119ballgridarray(bga) 165finepitchballgridarray(fbga) power xx speed xx package pf* bg bq idt 71v3548 133 100 clock frequency in megahertz 5296 drw 12 device type , x process/ temperature range commercial (0c to +70c) industrial (-40c to +85c) blank i standard power standard power with jtag interface s sa * jtag (sa version) is not available with 100-pin tqfp package xx
6.42 26 idt71v3548, 256k x 18, 3.3v synchronous srams with zbt ? ? ? ? ? feature, 3.3v i/o, burst counter, and pipelined outputs commercial and industrial temperature range s corporate headquarters for sales: for tech support: 2975 stender way 800-345-7015 or 408-727-6116 sramhelp@idt.com santa clara, ca 95054 fax: 408-492-8674 800-544-7726, x4033 www.idt.com the idt logo is a registered trademark of integrated device technology, inc. datasheet document history 12/31/99 created preliminary zbt datasheet from 71v3558 datasheet. changed t cdc , t clz , and t chz minimums from 1.0ns to 1.5ns. 04/30/00 pg. 3,4 add clarification note to recommended operating temperature and absolute max ratings tables pg. 4 add bga capacitance table pg. 4,5 add notes to pin configurations pg. 20 insert tqfp packagediagram outline 05/26/00 add new package offering, 13 x 15mm fbga pg. 23 correct 119 bga package diagram outline 07/26/00 pg. 4-6 add zz sleep mode reference note to tqfp, bg and bq pinouts pg. 6 update bq165 pinout pg. 21 update bg119 package diagram outline dimensions 10/25/00 remove preliminary status pg. 6 add reference note to pin n5 on bq165 pinout, reserved for jtag trst 05/20/02 pg. 1-6,13,20,21,25 added jtag "sa" version functionality and updated zz pin descriptions and notes. zbt and zerobus turnaround are trademarks of integrated device technology, inc. and the architecture is supported by micron tec hnology and motorola inc.

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